6.6 kW High Power Density Bi-Directional EV On-Board Charger Featuring Si8233BB

The CRD-06600FF065N reference design demonstrates the application of Wolfspeed’s 650 V C3M™ SiC MOSFETs and Silicon Labs’ Si8233BB dual isolated gate driver to create a high power density electric vehicle (EV) on-board charger (OBC). The design leverages the high frequency switching capabilities of Wolfspeed 650 V C3M™ SiC MOSFETs to create a small, light and cost-effective system. This reference design is offered as a comprehensive design package which can be used as a starting point for new SiC designs.

The design accomplishes

  • Peak efficiencies of 96.5%
  • Power densities of 53 W/in^3 or 3 KW/L


  • Universal single-phase input voltage between 90 V and 265 V
  • Output voltage of 250 V-450 V DC
  • 18 A output current in charging mode
  • Front end AC/DC PFC using CCM totem-pole bi-directional topology operating at 67 KHz
  • Bi-directional DC/DC CLLC resonant converter operating at 148-300 KHz
  • Constant current, constant voltage, or constant power mode
  • Unique integrated heatsink design removes heat from MOSFET’s, transformer, and inductors
  • Silicon Lab's Si8233 4 Amp highside/lowside dual isolated gate driver
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