Si823Hx Isolated Gate Drivers

Si823Hx devices are robust gate drivers for silicon-, GaN- or SiC-based power converter systems, such as SMPS or inverters. Features include a robust 30 V driver VDD capability, low latency for tighter loop control, noise filtering; high CMTI of 125 kV/µs, -5 V voltage withstand on output pins and over-temperature protection. A driver boost stage provides an increased current drive capability during the Miller plateau region for faster turn-on times. Based on our proprietary CMOS capacitive isolation technology, Si823Hx isolated gate drivers deliver superior performance with robust isolation rating to enable driving state-of-the-art GaN or SiC FETs for maximizing system efficiency, while ensuring safety with features such as UVLO protection and dead-time programmability.

Symmetric peak current
4 A
125 kV/µs

Common Specs

  • Single or dual isolated drivers in one package
    • 2.5 kVrms and 3.75 kVrms isolation options
  • DIS or EN pin for asynchronous shutdown option
  • VDDI of 3.0 V – 5.5 V
  • PWM and dual driver versions
  • 4.0 A sink/source peak output
  • 30 ns max propagation delay
  • Transient immunity: >125 kV/μs
  • Deglitch and noise filter options for robust operation in noisy environments
  • Robust 30 V driver side supply
  • Over temperature protection


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Part Number Isolation Rating (kVrms) Peak Output Current (A) UVLO Voltage (V) Input Type Output Configuration Package Type

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